About

Advanced Two-Dimensional Materials and Devices (ATMD)

The ‘Advanced Two-dimensional Materials and Devices (ATMD)’ research group focuses on developing cutting-edge two-dimensional (2D) materials like

  • MXenes
  • MBenes
  • Graphene
  • TMDCs

and their composites for applications in data storage, ferroelectrics, magnetism, energy storage, and photocatalysis. The group has uncovered various intriguing physical phenomena, paving the way for these 2D materials to be employed in practical applications for future scientific advancements.

By uncovering key physical phenomena, the group is driving the practical application of these materials in advanced scientific fields. These advanced 2D materials demonstrate remarkable properties across various applications, including non-volatile data storage in memory devices, thanks to their ferroelectric and magnetic characteristics attributed to the presence of transition metals. They also excel in energy storage for devices like supercapacitors and batteries due to their natural functionalization and efficient transport properties. Additionally, these materials are highly effective in dye degradation for water purification, as well as treating antibiotic-contaminated water from the pharmaceutical industry.

Group Leader

Prof. Syed Rizwan Hussain

Email: syedrizwan@sns.nust.edu.pk; syedrizwanh83@gmail.com Off: +92 51 886 5599(ext.) Official: https://sns.nust.edu.pk/faculty/syed-rizwan-hussain/

Biography

Established in 2015, the ATMD group is led by Prof. Syed Rizwan Hussain who is currently serving as a Professor of Physics at the Department of Physics, School of Natural Sciences, National University of Sciences and Technology (NUST), Islamabad, Pakistan. Dr. Syed Rizwan earned his PhD degree in Condensed Matter Physics from the Institute of Physics (IOP), University of Chinese Academy of Sciences, Beijing, China, in 2011. During his doctoral studies, he made significant contributions to the field of magnetism and spintronics, particularly through the development of magnetic and multiferroic thin film nanostructures for spin-valves and magnetic tunnel junctions based on artificial multiferroics, enhancing data storage technologies. He also made the first report on universal electro-resistance effect based on artificial multiferroics. Dr. Syed Rizwan further honed his expertise as a Senior Research Fellow at Peking University, China, where he focused on fabricating one-dimensional nanowire-based spin field-effect transistors using electron beam lithography, achieving channel dimensions smaller than the mean free path. Since joining NUST in 2015, he has led pioneering research in advanced two-dimensional materials, including MXenes, MBenes, and Graphene, with applications ranging from energy storage and magnetism to catalysis and memristors.

Throughout his career, Dr. Syed Rizwan has garnered several prestigious accolades, including NUST's University Best Researcher Award in Natural and Biosciences for 2020, the School’s Best Researcher Awards for years 2017 and 2021. He was also recognized among the top 2% of scientists globally, as ranked by Stanford University and Elsevier, underscoring his significant contributions to the scientific community.